Inha University Develops Ultra-Low-Power Flexible Synapse for Neuromorphic Edge Computing
A team led by Professors Moon-Sang Lee and Myung-Kwan Ham at Inha University has developed a groundbreaking flexible, ultra-low-power artificial synaptic device. The device, based on tellurene, a 2D form of tellurium, demonstrates remarkable potential for neuromorphic edge computing applications.
The device, published in the Royal Society of Chemistry's Journal of Materials Chemistry C, showcases an ultra-low-power consumption of about 10 femtojoules (fJ). This achievement was made possible by the use of tellurene, which was synthesized and integrated into the artificial synapse with a transistor-like structure.
Professors Lee and Ham, along with co-corresponding author Professor Eon-Jeong Kim from Dongguk University, led the research. They noted that the device's high charge mobility, strong mechanical stability, and reconfigurability make it suitable for electronic skin, wearable devices, and other edge computing systems. Neuromorphic semiconductors, which mimic the structure of the human brain, enable parallel computing with significantly reduced power consumption.
The flexible, ultra-low-power artificial synaptic device, developed by Professors Lee and Ham's team, is a promising candidate for direct end-user applications in neuromorphic edge computing. The device's exceptional properties and the potential of 2D nanomaterials for such applications have been demonstrated, paving the way for future advancements in the field.
