Industrial applications can now benefit from increased power density thanks to Infineon's CoolSiC MOSFETs, specifically the 1200V G2 model, which comes in a Q-DPAK package.
Infineon Technologies AG has launched the CoolSiC MOSFETs 1200V G2 in a top-side-cooled (TSC) Q-DPAK package, bringing significant improvements to the efficiency and thermal performance of electric vehicle (EV) chargers and other industrial applications.
Improved Efficiency and Energy Savings
The new CoolSiC MOSFETs 1200V G2 boast up to 25% lower switching losses compared to the previous generation for devices with equivalent R_DS(on). This translates to about 0.1% higher system efficiency, enabling energy savings in demanding power systems at high switching frequencies.
Optimized Thermal Performance
Infineon’s advanced .XT die attach interconnection technology, used in the G2 devices, reduces thermal resistance by over 15% and MOSFET junction temperature by 11% compared to the first-generation products. This improvement allows for better heat dissipation and reduced cooling requirements.
Wide R_DS(on) Range for Design Flexibility
The CoolSiC MOSFETs 1200V G2 offer a wide R_DS(on) range, from 4 mΩ to 78 mΩ, providing designers with the flexibility to optimize system performance for different power levels and system needs in EV chargers, solar inverters, uninterruptible power supplies, motor drives, and solid-state circuit breakers.
Robust Operation Under Harsh Conditions
These G2 devices support overload operation up to 200°C junction temperature and exhibit high robustness against parasitic turn-on, ensuring reliable switching behavior in dynamic industrial environments.
Q-DPAK Package for Enhanced Heat Dissipation and Compact Designs
The TSC Q-DPAK form factor enhances heat dissipation directly through the top, improving power density and enabling compact, high-performance converter designs critical for EV charging infrastructure and industrial applications. The small footprint of the Q-DPAK package also supports compact system designs.
Advanced CoolSiC™ Trench MOSFET Technology
Underlying the CoolSiC MOSFETs 1200V G2 is the advanced CoolSiC™ trench MOSFET technology, which offers advantages such as the lowest gate charge, low device capacitances, an intrinsic diode with no reverse recovery losses, and a stable on-state threshold voltage of 4 V. These features collectively reduce system complexity and increase lifetime reliability.
In summary, the CoolSiC MOSFETs 1200V G2 in a TSC Q-DPAK package boost system efficiency and power density while reducing thermal challenges and increasing system reliability, making them ideal for high-performance EV chargers and demanding industrial power systems.
The CoolSiC MOSFET 1200V G2 in Q-DPAK single switch and dual half-bridge package variants are available now. For more information, visit www.infineon.com/coolsic-mosfet-discretes.
Energy-intensive industries and finance sectors can benefit from the enhanced efficiency of Infineon's CoolSiC MOSFETs 1200V G2, as their potential energy savings in high-frequency power systems could reduce operational costs. Furthermore, these advanced MOSFETs, used in technology-driven sectors such as EV charging infrastructure and industrial power systems, offer optimized thermal performance and increased system reliability due to their robust operation under harsh conditions and the use of advanced CoolSiC™ trench MOSFET technology.
