High-power density and efficiency in space and defense sector advance with Rad hard GaN technology
On September 17, 2025, at 2:00 PM ET, 1:00 PM CT, 11:00 AM PT, and 7:00 PM GMT, a webinar sponsored by Infineon Technologies will delve into the latest trends and needs in the field of radiation-hardened Gallium Nitride (GaN) technology for space and high-reliability applications.
The discussion, scheduled to last for 30 minutes, will focus on the growing need for efficiency in satellite communications, high-power density in space exploration, and high-power density and efficiency in missile systems. The webinar will also cover the impact of radiation effects on GaN devices and the advantages and opportunities of GaN in rad-hard applications.
Sean DArcy, Senior Marketing Director at Infineon Technologies, and Joe Dussi, Digital Marketing Manager at Infineon Technologies, will be the speakers for this event. Both have extensive experience in the Aerospace and Defense industry, working with manned and unmanned airborne systems, on-orbit space vehicles, and system designs for RADAR, Military Communications, Electronic Warfare, and Intelligent Munitions.
Key developments in rad-hard GaN technology include the launch of GaN High Electron Mobility Transistors (HEMTs) by Infineon Technologies, which meet the highest Joint Army Navy Space (JANS) specification MIL-PRF-19500/794. These devices offer best-in-class efficiency, power density, and thermal management for smaller, lighter, more reliable spacecraft power designs.
EPC Space also offers the EPC7030MSH device, a 300 V radiation-hardened GaN FET designed for space power systems. The company also provides highly integrated motor drive demonstration boards using rad-hard GaN ICs for reaction wheels, ion thrusters, and robotics in radiation-critical environments.
The webinar will also explore emerging standards and regulations governing rad-hard GaN development and discuss advanced packaging and testing techniques. The goal is to minimise size, weight, and power (SWaP) while maintaining immunity to single-event effects, which is paramount for mass-produced satellites and geostationary/deep-space systems.
Those who are already registered for the webinar can log in by clicking the provided link. For those who have not yet registered, it's not too late! Join us to learn more about the exciting future of radiation-hardened GaN technology and its impact on space and high-reliability applications.
During the webinar, attendees can anticipate a discourse on the role of radiation-hardened Gallium Nitride (GaN) technology in addressing industry trends such as the need for efficient satellite communications, high-power density in space exploration, and high-power density and efficiency in missile systems. The discussion will also touch upon the significance of science and technology in enhancing our understanding and utilization of GaN devices, particularly in space-and-astronomy applications.
